JPS4959575A - - Google Patents

Info

Publication number
JPS4959575A
JPS4959575A JP7321973A JP7321973A JPS4959575A JP S4959575 A JPS4959575 A JP S4959575A JP 7321973 A JP7321973 A JP 7321973A JP 7321973 A JP7321973 A JP 7321973A JP S4959575 A JPS4959575 A JP S4959575A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7321973A
Other languages
Japanese (ja)
Other versions
JPS5142469B2 (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4959575A publication Critical patent/JPS4959575A/ja
Publication of JPS5142469B2 publication Critical patent/JPS5142469B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • ing And Chemical Polishing (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Radiography Using Non-Light Waves (AREA)
JP7321973A 1972-06-29 1973-06-28 Expired JPS5142469B2 (en])

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26767272A 1972-06-29 1972-06-29

Publications (2)

Publication Number Publication Date
JPS4959575A true JPS4959575A (en]) 1974-06-10
JPS5142469B2 JPS5142469B2 (en]) 1976-11-16

Family

ID=23019723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7321973A Expired JPS5142469B2 (en]) 1972-06-29 1973-06-28

Country Status (4)

Country Link
US (1) US3742230A (en])
JP (1) JPS5142469B2 (en])
DE (1) DE2333787C3 (en])
FR (1) FR2202425B1 (en])

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5184641A (en]) * 1974-12-31 1976-07-24 Ibm
JPS5192178A (en]) * 1975-02-10 1976-08-12
JPS5255382A (en) * 1975-10-28 1977-05-06 Hughes Aircraft Co Method of forming resist pattern and method of making ion absorption mask used therefor
JPS5375770A (en) * 1976-12-17 1978-07-05 Hitachi Ltd X-ray copying mask
JPH0473765A (ja) * 1990-07-16 1992-03-09 Toshiba Corp Ｘ線透過膜およびその製法

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask
US3916200A (en) * 1974-09-04 1975-10-28 Us Energy Window for radiation detectors and the like
US3947687A (en) * 1974-10-23 1976-03-30 The United States Of America As Represented By The Secretary Of The Air Force Collimated x-ray source for x-ray lithographic system
US3984680A (en) * 1975-10-14 1976-10-05 Massachusetts Institute Of Technology Soft X-ray mask alignment system
DE2606169C2 (de) * 1976-02-17 1983-09-01 Polymer-Physik GmbH & Co KG, 2844 Lemförde Elektronenaustrittsfenster für eine Elektronenstrahlquelle
US4198263A (en) * 1976-03-30 1980-04-15 Tokyo Shibaura Electric Co., Ltd. Mask for soft X-rays and method of manufacture
JPS5350680A (en) * 1976-10-19 1978-05-09 Nec Corp Transfer mask for x-ray exposure and its production
US4170512A (en) * 1977-05-26 1979-10-09 Massachusetts Institute Of Technology Method of manufacture of a soft-X-ray mask
US4218503A (en) * 1977-12-02 1980-08-19 Rockwell International Corporation X-ray lithographic mask using rare earth and transition element compounds and method of fabrication thereof
US4342917A (en) * 1978-01-16 1982-08-03 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4215192A (en) * 1978-01-16 1980-07-29 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
US4384919A (en) * 1978-11-13 1983-05-24 Sperry Corporation Method of making x-ray masks
US4536882A (en) * 1979-01-12 1985-08-20 Rockwell International Corporation Embedded absorber X-ray mask and method for making same
US4254174A (en) * 1979-03-29 1981-03-03 Massachusetts Institute Of Technology Supported membrane composite structure and its method of manufacture
DE2922416A1 (de) * 1979-06-01 1980-12-11 Ibm Deutschland Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask
US4301237A (en) * 1979-07-12 1981-11-17 Western Electric Co., Inc. Method for exposing substrates to X-rays
AT371947B (de) * 1979-12-27 1983-08-10 Rudolf Sacher Ges M B H Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten
US4557986A (en) * 1980-12-17 1985-12-10 Westinghouse Electric Corp. High resolution lithographic process
US4454209A (en) * 1980-12-17 1984-06-12 Westinghouse Electric Corp. High resolution soft x-ray or ion beam lithographic mask
US4349621A (en) * 1981-04-13 1982-09-14 General Electric Company Process for X-ray microlithography using thin film eutectic masks
DE3119682A1 (de) * 1981-05-18 1982-12-02 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie"
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
US4477921A (en) * 1981-11-27 1984-10-16 Spire Corporation X-Ray lithography source tube
US4436797A (en) 1982-06-30 1984-03-13 International Business Machines Corporation X-Ray mask
DE3232498A1 (de) * 1982-09-01 1984-03-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung
US4468282A (en) * 1982-11-22 1984-08-28 Hewlett-Packard Company Method of making an electron beam window
US4576832A (en) * 1982-12-30 1986-03-18 International Business Machines Corporation Self-aligning mask
DE3338717A1 (de) * 1983-10-25 1985-05-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie
DE3425063A1 (de) * 1984-07-07 1986-02-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Maske fuer die roentgenlithographie
US4708919A (en) * 1985-08-02 1987-11-24 Micronix Corporation Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure
JPH0658874B2 (ja) * 1986-03-18 1994-08-03 富士通株式会社 Ｘ線マスクの製造方法
DE3677005D1 (de) * 1986-05-06 1991-02-21 Ibm Deutschland Maske fuer die ionen-, elektronen- oder roentgenstrahllithographie und verfahren zur ihrer herstellung.
JPH02170410A (ja) * 1988-12-23 1990-07-02 Hitachi Ltd 放射線露光用マスクおよびこれを用いた放射線露光方法
IL88837A (en) * 1988-12-30 1993-08-18 Technion Res & Dev Foundation Method for the preparation of mask for x-ray lithography
US5146481A (en) * 1991-06-25 1992-09-08 Diwakar Garg Diamond membranes for X-ray lithography
DE69229987T2 (de) * 1991-11-15 2000-04-20 Canon K.K. Röntgenstrahlmaskenstruktur und -belichtungsverfahren sowie damit hergestelltes Halbleiterbauelement und Herstellungsverfahren für die Röntgenstrahlmaskenstruktur
US5529862A (en) * 1993-09-01 1996-06-25 Texas Instruments Incorporated Method of forming a low distortion stencil mask
US5491331A (en) * 1994-04-25 1996-02-13 Pilot Industries, Inc. Soft x-ray imaging device
US5570405A (en) * 1995-06-06 1996-10-29 International Business Machines Corporation Registration and alignment technique for X-ray mask fabrication
WO1997048114A1 (en) 1996-06-12 1997-12-18 American International Technologies, Inc. Actinic radiation source having anode that includes a window area formed by a thin, monolithic silicon membrane
US5919364A (en) * 1996-06-24 1999-07-06 Regents Of The University Of California Microfabricated filter and shell constructed with a permeable membrane
JP4346063B2 (ja) * 2002-12-03 2009-10-14 大日本印刷株式会社 転写マスクブランク、転写マスク並びにその転写マスクを用いた転写方法
US9275769B2 (en) * 2013-03-14 2016-03-01 Pcc Structurals, Inc. Marking template for radiography
US9152036B2 (en) * 2013-09-23 2015-10-06 National Synchrotron Radiation Research Center X-ray mask structure and method for preparing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3637380A (en) * 1967-06-26 1972-01-25 Teeg Research Inc Methods for electrochemically making metallic patterns by means of radiation-sensitive elements

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5184641A (en]) * 1974-12-31 1976-07-24 Ibm
JPS5192178A (en]) * 1975-02-10 1976-08-12
JPS5255382A (en) * 1975-10-28 1977-05-06 Hughes Aircraft Co Method of forming resist pattern and method of making ion absorption mask used therefor
JPS5375770A (en) * 1976-12-17 1978-07-05 Hitachi Ltd X-ray copying mask
JPH0473765A (ja) * 1990-07-16 1992-03-09 Toshiba Corp Ｘ線透過膜およびその製法

Also Published As

Publication number Publication date
DE2333787B2 (de) 1977-10-20
DE2333787C3 (de) 1978-06-15
FR2202425B1 (en]) 1976-05-28
FR2202425A1 (en]) 1974-05-03
JPS5142469B2 (en]) 1976-11-16
DE2333787A1 (de) 1974-01-17
US3742230A (en) 1973-06-26

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